Vishay SIR5812DP Type N-Channel Single MOSFETs, 45.3 A, 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3

N

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Subtotal (1 reel of 3000 units)*

PHP89,745.00

(exc. VAT)

PHP100,515.00

(inc. VAT)

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Per Reel*
3000 +PHP29.915PHP89,745.00

*price indicative

RS Stock No.:
653-197
Mfr. Part No.:
SIR5812DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

45.3A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK

Series

SIR5812DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0135Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

7.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

50W

Maximum Operating Temperature

150°C

Width

6.15 mm

Height

1.04mm

Length

5.15mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a PowerPAK SO-8, it's Ideal for DC/DC converters, synchronous rectification, motor control, and hot swap switching.

Pb Free

Halogen free

RoHS compliant

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