Vishay SIRS5702DP Type N-Channel Single MOSFETs, 119 A, 150 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-131
- Mfr. Part No.:
- SIRS5702DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
PHP279.33
(exc. VAT)
PHP312.85
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 6,000 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | PHP279.33 |
| 10 - 24 | PHP271.41 |
| 25 - 99 | PHP265.76 |
| 100 - 499 | PHP226.17 |
| 500 + | PHP212.60 |
*price indicative
- RS Stock No.:
- 653-131
- Mfr. Part No.:
- SIRS5702DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SIRS5702DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SIRS5702DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.1mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Automotive Standard No | ||
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SIRS5702DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIRS5702DP-T1-RE3
- Vishay SIRS4300DP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5700DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5812DP Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5700DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIRS5700DP-T1-RE3
- Vishay SIRS4300DP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRS4300DP-T1-RE3
- Vishay SIR5812DP Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC