Vishay SIR5812DP Type N-Channel Single MOSFETs, 45.3 A, 80 V Enhancement, 8-Pin PowerPAK

N

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PHP40.89

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PHP45.80

(inc. VAT)

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25 - 99PHP40.02
100 - 499PHP39.15
500 - 999PHP33.06
1000 +PHP31.32

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RS Stock No.:
653-198
Mfr. Part No.:
SIR5812DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

45.3A

Maximum Drain Source Voltage Vds

80V

Series

SIR5812DP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0135Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

1.04mm

Length

5.15mm

Width

6.15 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a PowerPAK SO-8, it's Ideal for DC/DC converters, synchronous rectification, motor control, and hot swap switching.

Pb Free

Halogen free

RoHS compliant

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