Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK SIRS4300DP-T1-RE3

N

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Subtotal (1 reel of 3000 units)*

PHP423,771.00

(exc. VAT)

PHP474,624.00

(inc. VAT)

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Per Reel*
3000 +PHP141.257PHP423,771.00

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RS Stock No.:
653-095
Mfr. Part No.:
SIRS4300DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

680A

Maximum Drain Source Voltage Vds

30V

Series

SIRS4300DP

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00040Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

84nC

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.95mm

Width

5.10 mm

Length

6.10mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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