Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK

N

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PHP194.86

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PHP218.24

(inc. VAT)

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1 - 9PHP194.86
10 - 24PHP188.77
25 - 99PHP185.29
100 - 499PHP157.46
500 +PHP147.89

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RS Stock No.:
653-096
Mfr. Part No.:
SIRS4300DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

680A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRS4300DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00040Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

84nC

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.10mm

Width

5.10 mm

Height

0.95mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8S, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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