Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220 IRFB3206PBF

RS Stock No.:: 495-574
Distrelec Article No.:: 302-84-033
Mfr. Part No.:: IRFB3206PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220 IRFB3206PBF

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PHP109.06

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PHP122.15

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In Stock

184 unit(s) ready to ship from another location
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Units	Per Unit
1 - 9	PHP109.06
10 - 49	PHP105.79
50 - 99	PHP102.62
100 - 249	PHP99.54
250 +	PHP96.55

*price indicative

RS Stock No.:: 495-574
Distrelec Article No.:: 302-84-033
Mfr. Part No.:: IRFB3206PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	210A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	120nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Height	9.02mm
	Width	4.83 mm
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	30284033

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 210A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 120nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Height 9.02mm
	Width 4.83 mm
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 30284033

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