Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP3,781.00

(exc. VAT)

PHP4,234.50

(inc. VAT)

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Units
Per Unit
Per Tube*
50 - 50PHP75.62PHP3,781.00
100 - 200PHP72.682PHP3,634.10
250 - 450PHP68.921PHP3,446.05
500 - 950PHP65.692PHP3,284.60
1000 +PHP62.879PHP3,143.95

*price indicative

RS Stock No.:
124-8962
Mfr. Part No.:
IRFB3206PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

120nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.02mm

Width

4.83 mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

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