Infineon HEXFET Type N-Channel MOSFET, 210 A, 40 V Enhancement, 3-Pin TO-220 IRF2204PBF

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Subtotal (1 pack of 5 units)*

PHP615.86

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PHP689.765

(inc. VAT)

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Units
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Per Pack*
5 - 45PHP123.172PHP615.86
50 - 95PHP95.80PHP479.00
100 - 245PHP86.122PHP430.61
250 - 495PHP84.464PHP422.32
500 +PHP78.38PHP391.90

*price indicative

Packaging Options:
RS Stock No.:
262-6722
Mfr. Part No.:
IRF2204PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Distrelec Product Id

304-41-665

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Dynamic dv/dt rating

Repetitive avalanche allowed up to Tjmax

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