Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220 IRFB3077PBF
- RS Stock No.:
- 650-4716
- Distrelec Article No.:
- 303-41-316
- Mfr. Part No.:
- IRFB3077PBF
- Manufacturer:
- Infineon
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- 126 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 24 | PHP190.00 |
| 25 - 99 | PHP184.30 |
| 100 - 249 | PHP178.77 |
| 250 - 499 | PHP173.40 |
| 500 + | PHP168.21 |
*price indicative
- RS Stock No.:
- 650-4716
- Distrelec Article No.:
- 303-41-316
- Mfr. Part No.:
- IRFB3077PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.82 mm | |
| Height | 9.02mm | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341316 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.82 mm | ||
Height 9.02mm | ||
Length 10.66mm | ||
Automotive Standard No | ||
Distrelec Product Id 30341316 | ||

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF
This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.
Features & Benefits
• Achieves low RDS(on) of 3.3mΩ for efficient operation
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical
What operating temperature range can this component endure?
It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.
How does the low RDS(on) benefit the application?
The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.
What are the advantages of the TO-220AB package format?
This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.
What type of gate threshold voltage does it require?
The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.
Related links
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3206PBF
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- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
