Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220 IRF1404ZPBF

RS Stock No.:: 688-6813
Mfr. Part No.:: IRF1404ZPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220 IRF1404ZPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

PHP159.60

(exc. VAT)

PHP178.76

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

4 unit(s) ready to ship from another location
Plus 48 unit(s) shipping from January 02, 2026
Plus 1,000 unit(s) shipping from January 15, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Pack*
2 - 8	PHP79.80	PHP159.60
10 - 38	PHP77.405	PHP154.81
40 - 98	PHP75.085	PHP150.17
100 - 198	PHP72.825	PHP145.65
200 +	PHP70.64	PHP141.28

*price indicative

RS Stock No.:: 688-6813
Mfr. Part No.:: IRF1404ZPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	190A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	220W
	Typical Gate Charge Qg @ Vgs	100nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 190A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 220W
	Typical Gate Charge Qg @ Vgs 100nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Length 10.54mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF

This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency

• Designed for enhancement mode to optimise switching

• Provides fast switching speed to boost overall efficiency

• Capable of repetitive avalanche to enhance reliability

Applications

• Ideal for use in motor control circuits

• Utilised in power supplies and converters

• Designed for use in automotive

• Suited for various industrial automation systems

• Effective in power management and switching

How does the low on-resistance benefit my applications?

The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.

What happens if the device exceeds its maximum operating temperature?

Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.

Can this be used in parallel configurations?

Yes, when used in parallel configurations, it is Crucial to balance current sharing between devices to avoid overheating and maximise performance.