Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220 IRF1404ZPBF
- RS Stock No.:
- 688-6813
- Mfr. Part No.:
- IRF1404ZPBF
- Manufacturer:
- Infineon
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PHP216.43
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PHP242.402
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP108.215 | PHP216.43 |
| 10 - 38 | PHP104.965 | PHP209.93 |
| 40 - 98 | PHP101.82 | PHP203.64 |
| 100 - 198 | PHP98.755 | PHP197.51 |
| 200 + | PHP95.79 | PHP191.58 |
*price indicative
- RS Stock No.:
- 688-6813
- Mfr. Part No.:
- IRF1404ZPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 220W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 220W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF
This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Designed for enhancement mode to optimise switching
• Provides fast switching speed to boost overall efficiency
• Capable of repetitive avalanche to enhance reliability
Applications
• Ideal for use in motor control circuits
• Utilised in power supplies and converters
• Designed for use in automotive
• Suited for various industrial automation systems
• Effective in power management and switching
How does the low on-resistance benefit my applications?
The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.
What happens if the device exceeds its maximum operating temperature?
Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.
Can this be used in parallel configurations?
Yes, when used in parallel configurations, it is Crucial to balance current sharing between devices to avoid overheating and maximise performance.
Related links
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- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1
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- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220