Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP3,234.00

(exc. VAT)

PHP3,622.00

(inc. VAT)

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50 +PHP64.68PHP3,234.00

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RS Stock No.:
145-9431
Mfr. Part No.:
IRF1404ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

100nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

220W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

8.77mm

Width

4.69 mm

Standards/Approvals

No

Length

10.54mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF


This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.

Features & Benefits


• Utilises HEXFET technology for enhanced efficiency

• Designed for enhancement mode to optimise switching

• Provides fast switching speed to boost overall efficiency

• Capable of repetitive avalanche to enhance reliability

Applications


• Ideal for use in motor control circuits

• Utilised in power supplies and converters

• Designed for use in automotive

• Suited for various industrial automation systems

• Effective in power management and switching

How does the low on-resistance benefit my applications?


The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.

What happens if the device exceeds its maximum operating temperature?


Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.

Can this be used in parallel configurations?


Yes, when used in parallel configurations, it is Crucial to balance current sharing between devices to avoid overheating and maximise performance.

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