Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 145-9431
- Référence fabricant:
- IRF1404ZPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
70,80 €
(TVA exclue)
85,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 650 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,416 € | 70,80 € |
| 100 - 200 | 1,345 € | 67,25 € |
| 250 - 450 | 1,289 € | 64,45 € |
| 500 - 1200 | 1,204 € | 60,20 € |
| 1250 + | 1,133 € | 56,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-9431
- Référence fabricant:
- IRF1404ZPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 220W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Width | 4.69mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 220W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Width 4.69mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF
This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Designed for enhancement mode to optimise switching
• Provides fast switching speed to boost overall efficiency
• Capable of repetitive avalanche to enhance reliability
Applications
• Ideal for use in motor control circuits
• Utilised in power supplies and converters
• Designed for use in automotive
• Suited for various industrial automation systems
• Effective in power management and switching
How does the low on-resistance benefit my applications?
The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.
What happens if the device exceeds its maximum operating temperature?
Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.
Can this be used in parallel configurations?
Yes, when used in parallel configurations, it is Crucial to balance current sharing between devices to avoid overheating and maximise performance.
Liens connexes
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