Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

PHP486.86

(exc. VAT)

PHP545.28

(inc. VAT)

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  • 798 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP243.43PHP486.86
10 - 48PHP209.86PHP419.72
50 - 98PHP164.475PHP328.95
100 - 248PHP132.215PHP264.43
250 +PHP129.59PHP259.18

*price indicative

Packaging Options:
RS Stock No.:
262-5848
Mfr. Part No.:
IPB013N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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