Infineon iPB Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

PHP609.84

(exc. VAT)

PHP683.02

(inc. VAT)

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  • 550 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 20PHP121.968PHP609.84
25 - 45PHP82.408PHP412.04
50 - 95PHP80.704PHP403.52
100 - 245PHP66.218PHP331.09
250 +PHP64.878PHP324.39

*price indicative

Packaging Options:
RS Stock No.:
262-5859
Mfr. Part No.:
IPB029N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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