Infineon iPB Type N-Channel MOSFET, 187 A, 60 V Enhancement, 3-Pin TO-263 IPB018N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

PHP687.90

(exc. VAT)

PHP770.45

(inc. VAT)

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  • 790 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 20PHP137.58PHP687.90
25 - 45PHP92.95PHP464.75
50 - 95PHP91.106PHP455.53
100 - 245PHP74.752PHP373.76
250 +PHP73.276PHP366.38

*price indicative

Packaging Options:
RS Stock No.:
262-5855
Mfr. Part No.:
IPB018N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

187A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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