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    N-Channel MOSFET, 79 A, 60 V, 3-Pin TO-220AB Infineon IRF1018EPBF

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    Bulk discount available

    Subtotal (1 pack of 5 units)**

    PHP305.05

    (exc. VAT)

    PHP341.65

    (inc. VAT)

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    Temporarily out of stock - back order for despatch 29/05/2025, delivery within 10 working days from desptach date*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Pack**
    5 - 20PHP61.01PHP305.05
    25 - 95PHP54.91PHP274.55
    100 - 245PHP49.418PHP247.09
    250 - 495PHP44.476PHP222.38
    500 +PHP40.03PHP200.15

    **price indicative

    Packaging Options:
    RS Stock No.:
    688-6800
    Mfr. Part No.:
    IRF1018EPBF
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    79 A

    Maximum Drain Source Voltage

    60 V

    Series

    HEXFET

    Package Type

    TO-220AB

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    8 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    110 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Typical Gate Charge @ Vgs

    46 nC @ 10 V

    Number of Elements per Chip

    1

    Length

    10.67mm

    Maximum Operating Temperature

    +175 °C

    Width

    4.83mm

    Transistor Material

    Si

    Height

    9.02mm

    Minimum Operating Temperature

    -55 °C

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