Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

RS Stock No.:: 688-6800
Mfr. Part No.:: IRF1018EPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

PHP305.05

(exc. VAT)

PHP341.65

(inc. VAT)

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Plus 235 unit(s) shipping from December 26, 2025

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Units	Per Unit	Per Pack*
5 - 20	PHP61.01	PHP305.05
25 - 95	PHP54.91	PHP274.55
100 - 245	PHP49.418	PHP247.09
250 - 495	PHP44.476	PHP222.38
500 +	PHP40.03	PHP200.15

*price indicative

RS Stock No.:: 688-6800
Mfr. Part No.:: IRF1018EPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	79A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Power Dissipation Pd	110W
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Length	10.67mm
	Standards/Approvals	No
	Height	9.02mm
	Distrelec Product Id	304-43-449
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 79A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Power Dissipation Pd 110W
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Length 10.67mm
	Standards/Approvals No
	Height 9.02mm
	Distrelec Product Id 304-43-449
	Automotive Standard No

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