Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 800 units)*

PHP35,264.00

(exc. VAT)

PHP39,496.00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per Unit
Per Reel*
800 - 800PHP44.08PHP35,264.00
1600 - 2400PHP42.758PHP34,206.40
3200 - 5600PHP41.047PHP32,837.60
6400 +PHP38.995PHP31,196.00

*price indicative

RS Stock No.:
257-9267
Mfr. Part No.:
IRF1018ESTRLPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

8.4mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

46nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dv/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability

Related links