Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220

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Subtotal (1 reel of 800 units)*

PHP33,892.00

(exc. VAT)

PHP37,959.20

(inc. VAT)

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  • 2,400 unit(s) ready to ship from another location
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Units
Per Unit
Per Reel*
800 - 800PHP42.365PHP33,892.00
1600 - 2400PHP41.094PHP32,875.20
3200 - 5600PHP39.451PHP31,560.80
6400 +PHP37.478PHP29,982.40

*price indicative

RS Stock No.:
257-9267
Mfr. Part No.:
IRF1018ESTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-220

Mount Type

Surface

Maximum Drain Source Resistance Rds

8.4mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

46nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dv/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability

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