Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 142 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
- RS Stock No.:
- 284-717
- Mfr. Part No.:
- IMT65R030M1HXUMA1
- Manufacturer:
- Infineon
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- RS Stock No.:
- 284-717
- Mfr. Part No.:
- IMT65R030M1HXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 294W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC MOSFET 650 V G1 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 294W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G1 is engineered for the modern demands of high performance applications, offering a robust solution in a Compact package. Designed with cutting edge solid silicon carbide technology, this semiconductor device combines exceptional reliability and efficiency, making it Ideal for a broad range of applications such as solar inverters, electric vehicle charging infrastructure, and uninterruptible power supplies. With a focus on simplicity and cost effectiveness, it enhances system performance while ensuring superior thermal stability for challenging environments. This device guarantees not just performance but also a seamless integration into various designs, redefining what’s possible in power management.
Optimised switching enhances operational efficiency
Robust body diode supports Advanced applications
Exceptional thermal performance in extreme conditions
Kelvin source reduces switching losses
High avalanche capability for system durability
Compatible with standard drivers for easy integration
Compact design increases power density
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