Name: Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 142 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Brand: Infineon
SKU: 284-715
Price: 999.59 PHP
Availability: OutOfStock

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	142A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-HSOF-8
	Series	CoolSiC MOSFET 650 V G1
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Power Dissipation Pd	294W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 142A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-HSOF-8
	Series CoolSiC MOSFET 650 V G1
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Power Dissipation Pd 294W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IMT65R030M1HXUMA1

The Infineon CoolSiC MOSFET 650 V G1 is engineered for the modern demands of high performance applications, offering a robust solution in a Compact package. Designed with cutting edge solid silicon carbide technology, this semiconductor device combines exceptional reliability and efficiency, making it Ideal for a broad range of applications such as solar inverters, electric vehicle charging infrastructure, and uninterruptible power supplies. With a focus on simplicity and cost effectiveness, it enhances system performance while ensuring superior thermal stability for challenging environments. This device guarantees not just performance but also a seamless integration into various designs, redefining what’s possible in power management.

Optimised switching enhances operational efficiency

Robust body diode supports Advanced applications

Exceptional thermal performance in extreme conditions

Kelvin source reduces switching losses

High avalanche capability for system durability

Compatible with standard drivers for easy integration

Compact design increases power density

Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 142 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1

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