Infineon CoolSiC Type N-Channel MOSFET, 142 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R015M2HXTMA1
- RS Stock No.:
- 349-047
- Mfr. Part No.:
- IMLT65R015M2HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
PHP1,672.22
(exc. VAT)
PHP1,872.89
(inc. VAT)
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- Shipping from November 15, 2027
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP1,672.22 |
| 10 - 99 | PHP1,504.65 |
| 100 + | PHP1,387.70 |
*price indicative
- RS Stock No.:
- 349-047
- Mfr. Part No.:
- IMLT65R015M2HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-16 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-16 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, providing unparalleled performance, superior reliability, and excellent ease of use. Designed to meet the demands of modern power systems, this MOSFET enables cost effective, highly efficient, and simplified designs. It is the ideal solution for addressing the ever-growing needs of power systems and markets, offering both high performance and energy efficiency for a wide range of applications.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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