Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

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PHP616.17

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PHP690.11

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 18PHP308.085PHP616.17
20 - 198PHP277.54PHP555.08
200 - 998PHP255.72PHP511.44
1000 - 1998PHP237.39PHP474.78
2000 +PHP212.52PHP425.04

*price indicative

RS Stock No.:
351-885
Mfr. Part No.:
IGLT65R110D2ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HDSOP-16

Series

IGLT65

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

0.14Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

55W

Typical Gate Charge Qg @ Vgs

2.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

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