Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1

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RS Stock No.:
349-256
Mfr. Part No.:
IPT60R016CM8XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

142A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

171nC

Maximum Power Dissipation Pd

694W

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC

Automotive Standard

No

COO (Country of Origin):
MY

Infineon IPT Series Power MOSFET, 600V Drain Source Voltage, 142A Maximum Continuous Drain Current - IPT60R016CM8XTMA1


This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power conversion roles in demanding electronic systems. It operates across a wide ambient range and is supplied in a compact surface-mount package for integration on populated boards where robust thermal and current handling are required.

Features and Benefits:


• 600V rating enables high-voltage switching applications
• 16mΩ Rds(on) reduces conduction losses during heavy load
• 142A continuous current supports high-current power stages
• 171nC typical gate charge allows quicker gate-drive transitions
• 694W maximum power dissipation aids thermal margin planning
• 30V gate tolerance supports flexible gate-drive voltages

Applications


• Suitable for industrial motor inverter stages
• Ideal for high-voltage power supplies and converters
• Used with resonant and hard-switched SMPS topologies
• Can be used for traction and heavy-duty DC-DC systems
• Suitable for board-level power distribution and switching

What package and mounting method does it use for PCB assembly?


It is supplied in a PG-HSOF-8 package intended for surface-mount placement to facilitate automated assembly and thermal conduction to the board.

How does it perform across temperature extremes?


The device is rated to operate from -55°C up to 150°C, supporting applications exposed to wide temperature variations.

What gate-voltage limits should be observed during design?


Gate-source voltages must not exceed 30V to prevent gate-dielectric stress.

Is it compliant with any industry testing standards?


It meets JEDEC standards for semiconductor qualification and handling.

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