Infineon IPT Type N-Channel Power MOSFET, 23 A, 0.82 V Enhancement, 8-Pin PG-HSOF-8
- RS Stock No.:
- 273-2796
- Mfr. Part No.:
- IPT60R022S7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP548.46
(exc. VAT)
PHP614.28
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 22 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 49 | PHP548.46 |
| 50 - 99 | PHP498.49 |
| 100 - 249 | PHP456.85 |
| 250 - 999 | PHP421.76 |
| 1000 + | PHP392.01 |
*price indicative
- RS Stock No.:
- 273-2796
- Mfr. Part No.:
- IPT60R022S7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 0.82V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 390W | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 0.82V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 390W | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS SJ S7 power device. It enables the best price performance for low frequency switching applications. The CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
Total Pb free
RoHS compliant
Faster switching times
Easy visual inspection leads
Minimized conduction losses
More compact and easier design
Related links
- Infineon IPT Type N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8 IPT60R022S7XTMA1
- Infineon IPT Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power Transistor 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-HSOF-8 IPT020N13NM6ATMA1
- Infineon IPT Type N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- Infineon IPT Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-HSOF-8 IPT067N20NM6ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8