Infineon IPT Type N-Channel Power MOSFET, 23 A, 0.82 V Enhancement, 8-Pin PG-HSOF-8 IPT60R022S7XTMA1

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Subtotal (1 reel of 2000 units)*

PHP993,548.00

(exc. VAT)

PHP1,112,774.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2000 +PHP496.774PHP993,548.00

*price indicative

RS Stock No.:
273-2795
Mfr. Part No.:
IPT60R022S7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

0.82V

Package Type

PG-HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

390W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.82V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, JEDEC

Automotive Standard

No

The Infineon MOSFET is a 600V CoolMOS SJ S7 power device. It enables the best price performance for low frequency switching applications. The CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

Total Pb free

RoHS compliant

Faster switching times

Easy visual inspection leads

Minimized conduction losses

More compact and easier design

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