Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1
- RS Stock No.:
- 349-054
- Mfr. Part No.:
- IMT65R107M1HXUMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
PHP932.99
(exc. VAT)
PHP1,044.948
(inc. VAT)
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In Stock
- 2,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 18 | PHP466.495 | PHP932.99 |
| 20 - 198 | PHP419.80 | PHP839.60 |
| 200 + | PHP387.51 | PHP775.02 |
*price indicative
- RS Stock No.:
- 349-054
- Mfr. Part No.:
- IMT65R107M1HXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 141mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 138W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 141mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 138W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G1 is built on over 20 years of solid silicon carbide technology developed by Infineon. By leveraging the unique characteristics of wide bandgap SiC materials, the 650 V CoolSiC MOSFET delivers an exceptional combination of performance, reliability, and ease of use. It is designed for high temperature and harsh operating conditions, making it ideal for demanding applications. This MOSFET enables the simplified and cost-effective deployment of systems with the highest efficiency, addressing the increasing needs of modern power electronics.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides up to 4 times lower switching losses
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