Infineon CoolSiC Type N-Channel MOSFET, 26 A, 650 V Enhancement, 3-Pin TO-247 IMW65R072M1HXKSA1

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PHP416.86

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PHP466.88

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1 - 4PHP416.86
5 - 9PHP408.61
10 - 14PHP400.35
15 - 19PHP392.48
20 +PHP384.61

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Packaging Options:
RS Stock No.:
232-0395
Mfr. Part No.:
IMW65R072M1HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

650V

Series

CoolSiC

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

94mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 3-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.

Low capacitances

Optimized switching behaviour at higher currents

Superior gate oxide reliability

Excellent thermal behaviour

Increased avalanche capability

Works with standard drivers

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