IXYS HiperFET, Polar N-Channel MOSFET, 150 A, 150 V, 4-Pin SOT-227 IXFN180N15P

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Subtotal (1 unit)*

PHP1,544.00

(exc. VAT)

PHP1,729.28

(inc. VAT)

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1 - 9PHP1,544.00
10 - 49PHP1,543.43
50 - 99PHP1,419.98
100 - 249PHP1,418.85
250 +PHP1,378.64

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RS Stock No.:
194-259
Mfr. Part No.:
IXFN180N15P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

SOT-227B

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

680 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.42mm

Typical Gate Charge @ Vgs

240 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Transistor Material

Si

Length

38.23mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


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