IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 804-7583
- Distrelec Article No.:
- 302-53-379
- Mfr. Part No.:
- IXFN80N50Q3
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
PHP2,845.82
(exc. VAT)
PHP3,187.32
(inc. VAT)
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- Shipping from September 11, 2026
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP2,845.82 |
| 10 - 49 | PHP2,760.44 |
| 50 - 99 | PHP2,677.62 |
| 100 - 249 | PHP2,597.29 |
| 250 + | PHP2,519.38 |
*price indicative
- RS Stock No.:
- 804-7583
- Distrelec Article No.:
- 302-53-379
- Mfr. Part No.:
- IXFN80N50Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 780W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 200nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Distrelec Product Id | 30253379 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 780W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 200nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Distrelec Product Id 30253379 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
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