IXYS Type N-Channel MOSFET, 28 A, 1 kV Enhancement, 4-Pin SOT-227
- RS Stock No.:
- 804-7574
- Distrelec Article No.:
- 302-53-369
- Mfr. Part No.:
- IXFN32N100Q3
- Manufacturer:
- IXYS
Bulk discount available
Subtotal (1 unit)*
PHP4,323.49
(exc. VAT)
PHP4,842.31
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 9 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP4,323.49 |
| 10 - 49 | PHP4,239.18 |
| 50 - 99 | PHP4,155.67 |
| 100 - 249 | PHP4,073.04 |
| 250 + | PHP3,992.95 |
*price indicative
- RS Stock No.:
- 804-7574
- Distrelec Article No.:
- 302-53-369
- Mfr. Part No.:
- IXFN32N100Q3
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 780W | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Distrelec Product Id | 30253369 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 780W | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Distrelec Product Id 30253369 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN32N100Q3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-227