IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227 IXFN200N10P

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Subtotal (1 unit)*

PHP1,553.90

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PHP1,740.37

(inc. VAT)

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Per Unit
1 - 1PHP1,553.90
2 - 4PHP1,507.30
5 - 9PHP1,462.07
10 - 19PHP1,418.21
20 +PHP1,375.67

*price indicative

RS Stock No.:
125-8040
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Series

Polar HiPerFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

680W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

235nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

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