IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

PHP18,308.44

(exc. VAT)

PHP20,505.45

(inc. VAT)

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  • 140 unit(s) ready to ship from another location
  • Plus 670 unit(s) shipping from January 01, 2026
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Units
Per Unit
Per Tube*
10 +PHP1,830.844PHP18,308.44

*price indicative

RS Stock No.:
168-4576
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

Polar HiPerFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

680W

Typical Gate Charge Qg @ Vgs

235nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

25.07 mm

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
PH

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