STMicroelectronics STGW30NC60KD, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

PHP1,912.40

(exc. VAT)

PHP2,141.90

(inc. VAT)

Add to Basket
Select or type quantity
Orders below PHP3,000.00 (exc. VAT) cost PHP150.00.
In Stock
  • 5 unit(s) ready to ship from another location
  • Plus 355 unit(s) shipping from February 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 20PHP382.48PHP1,912.40
25 - 95PHP371.006PHP1,855.03
100 - 245PHP359.876PHP1,799.38
250 - 495PHP349.084PHP1,745.42
500 +PHP338.612PHP1,693.06

*price indicative

Packaging Options:
RS Stock No.:
877-2905
Mfr. Part No.:
STGW30NC60KD
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

60A

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

200W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

29ns

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

Rugged

Height

20.15mm

Standards/Approvals

JEDEC Standard JESD97

Automotive Standard

No

Energy Rating

1435mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links