STMicroelectronics, Type N-Channel IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

PHP7,227.60

(exc. VAT)

PHP8,094.90

(inc. VAT)

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30 +PHP240.92PHP7,227.60

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RS Stock No.:
168-8881
Mfr. Part No.:
STGW30NC60KD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

200W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

29ns

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Operating Temperature

150°C

Series

Rugged

Standards/Approvals

JEDEC Standard JESD97

Height

20.15mm

Automotive Standard

No

Energy Rating

1435mJ

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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