- RS Stock No.:
- 791-7630
- Mfr. Part No.:
- STGW30V60DF
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 29/05/2024, delivery within 10 working days from desptach date
Added
Price Each (In a Pack of 5)
PHP201.96
(exc. VAT)
PHP226.20
(inc. VAT)
Units | Per Unit | Per Pack* |
5 - 20 | PHP201.96 | PHP1,009.80 |
25 - 45 | PHP195.898 | PHP979.49 |
50 - 245 | PHP190.024 | PHP950.12 |
250 - 495 | PHP184.324 | PHP921.62 |
500 + | PHP178.794 | PHP893.97 |
*price indicative |
- RS Stock No.:
- 791-7630
- Mfr. Part No.:
- STGW30V60DF
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 258 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |