STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P, Through Hole

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PHP413.82

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PHP463.48

(inc. VAT)

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2 - 8PHP206.91PHP413.82
10 - 38PHP200.70PHP401.40
40 - 98PHP194.675PHP389.35
100 - 198PHP188.835PHP377.67
200 +PHP183.175PHP366.35

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Packaging Options:
RS Stock No.:
860-7325
Mfr. Part No.:
STGWT30H60DFB
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 14.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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