STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

PHP1,425.60

(exc. VAT)

PHP1,596.65

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 25 unit(s) ready to ship from another location
  • Plus 110 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 45PHP285.12PHP1,425.60
50 - 145PHP276.568PHP1,382.84
150 - 295PHP268.272PHP1,341.36
300 - 595PHP260.224PHP1,301.12
600 +PHP252.42PHP1,262.10

*price indicative

Packaging Options:
RS Stock No.:
791-7643
Mfr. Part No.:
STGW60V60DF
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links