STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

PHP8,309.25

(exc. VAT)

PHP9,306.36

(inc. VAT)

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Units
Per Unit
Per Tube*
30 - 90PHP276.975PHP8,309.25
120 - 240PHP270.051PHP8,101.53
270 - 480PHP263.30PHP7,899.00
510 - 990PHP256.717PHP7,701.51
1020 +PHP250.299PHP7,508.97

*price indicative

RS Stock No.:
206-6065
Mfr. Part No.:
STGWA30IH65DF
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

108 W

Package Type

TO-247

Pin Count

4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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