Infineon IHW30N65R5XKSA1, N-Channel IGBT Single Transistor IC, 60 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP1,121.85
(exc. VAT)
PHP1,256.45
(inc. VAT)
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In Stock
- Plus 250 unit(s) shipping from October 12, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP224.37 | PHP1,121.85 |
| 10 - 95 | PHP205.478 | PHP1,027.39 |
| 100 - 245 | PHP189.784 | PHP948.92 |
| 250 - 495 | PHP176.128 | PHP880.64 |
| 500 + | PHP171.188 | PHP855.94 |
*price indicative
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 176W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Width | 16.13mm | |
| Standards/Approvals | RoHS | |
| Height | 5.21mm | |
| Length | 42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 176W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Width 16.13mm | ||
Standards/Approvals RoHS | ||
Height 5.21mm | ||
Length 42mm | ||
Automotive Standard No | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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