Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP851.20
(exc. VAT)
PHP953.35
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 255 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP170.24 | PHP851.20 |
| 10 - 95 | PHP155.906 | PHP779.53 |
| 100 - 245 | PHP144.00 | PHP720.00 |
| 250 - 495 | PHP133.638 | PHP668.19 |
| 500 + | PHP129.888 | PHP649.44 |
*price indicative
- RS Stock No.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 176 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 176 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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