STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

PHP837.14

(exc. VAT)

PHP937.60

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8PHP418.57PHP837.14
10 +PHP406.015PHP812.03

*price indicative

Packaging Options:
RS Stock No.:
206-8629
Mfr. Part No.:
STGW75H65DFB2-4
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

357 W

Number of Transistors

1

Package Type

TO-247

Pin Count

4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Excellent switching performance thanks to the extra driving kelvin pin

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


Related links