STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

PHP8,005.56

(exc. VAT)

PHP8,966.22

(inc. VAT)

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Units
Per Unit
Per Tube*
30 - 90PHP266.852PHP8,005.56
120 - 240PHP258.846PHP7,765.38
270 - 480PHP251.08PHP7,532.40
510 - 990PHP243.548PHP7,306.44
1020 +PHP236.242PHP7,087.26

*price indicative

RS Stock No.:
206-7211
Mfr. Part No.:
STGWA75H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

357 W

Number of Transistors

1

Package Type

TO-247

Pin Count

3

Transistor Configuration

Single

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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