STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

PHP12,398.01

(exc. VAT)

PHP13,885.77

(inc. VAT)

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Units
Per Unit
Per Tube*
30 - 90PHP413.267PHP12,398.01
120 - 240PHP405.002PHP12,150.06
270 - 480PHP396.902PHP11,907.06
510 - 990PHP388.964PHP11,668.92
1020 +PHP381.184PHP11,435.52

*price indicative

RS Stock No.:
206-6063
Mfr. Part No.:
STGW75H65DFB2-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

357 W

Package Type

TO-247

Pin Count

4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Excellent switching performance thanks to the extra driving kelvin pin

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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