STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247

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Subtotal (1 pack of 2 units)*

PHP537.44

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PHP601.94

(inc. VAT)

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2 - 8PHP268.72PHP537.44
10 +PHP229.175PHP458.35

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Packaging Options:
RS Stock No.:
206-7212
Mfr. Part No.:
STGWA75H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

115 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

357 W

Package Type

TO-247

Pin Count

3

Transistor Configuration

Single

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

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