STMicroelectronics STGW100H65FB2-4 IGBT, 145 A 650 V, 4-Pin TO247-4

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Subtotal (1 tube of 30 units)*

PHP15,899.52

(exc. VAT)

PHP17,807.46

(inc. VAT)

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Units
Per Unit
Per Tube*
30 - 90PHP529.984PHP15,899.52
120 - 480PHP519.384PHP15,581.52
510 - 990PHP508.996PHP15,269.88
1020 +PHP498.817PHP14,964.51

*price indicative

RS Stock No.:
212-2106
Mfr. Part No.:
STGW100H65FB2-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

145 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

441 W

Number of Transistors

1

Package Type

TO247-4

Channel Type

N

Pin Count

4

Transistor Configuration

Single

IGBT


The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.

Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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