Infineon BFP183E7764HTSA1 Low Noise Silicon Bipolar RF Transistor, 65 mA, 20 V, 4-Pin SOT-143

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Subtotal (1 reel of 3000 units)*

PHP27,525.00

(exc. VAT)

PHP30,828.00

(inc. VAT)

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Per Reel*
3000 +PHP9.175PHP27,525.00

*price indicative

RS Stock No.:
273-7292
Mfr. Part No.:
BFP183E7764HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Low Noise Silicon Bipolar RF Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-143

Mount Type

Surface

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

250mW

Maximum Transition Frequency ft

8GHz

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

2V

Minimum DC Current Gain hFE

70

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP183

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

The Infineon Silicon Bipolar RF Transistor is designed for low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA. This RF transistor has qualification report according to AEC Q101.

Pb free package

RoHS compliant

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