Infineon BFQ19SH6327XTSA1 RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89

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Subtotal (1 pack of 10 units)*

PHP181.17

(exc. VAT)

PHP202.91

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP18.117PHP181.17
50 - 90PHP17.573PHP175.73
100 - 240PHP16.87PHP168.70
250 - 490PHP16.027PHP160.27
500 +PHP15.065PHP150.65

*price indicative

Packaging Options:
RS Stock No.:
260-5067
Mfr. Part No.:
BFQ19SH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

120mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-89

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Emitter Base Voltage VEBO

3V

Maximum Transition Frequency ft

5.5GHz

Transistor Polarity

NPN

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

1W

Minimum DC Current Gain hFE

70

Pin Count

3

Maximum Operating Temperature

150°C

Series

BFQ

Standards/Approvals

RoHS

Length

4mm

Height

1.5mm

Automotive Standard

AEC-Q101

The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.

Pb free package

For low noise, low distortion broadband amplifiers in antenna and telecommunications systems

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