Infineon BFQ19SH6327XTSA1 RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89
- RS Stock No.:
- 260-5067
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP181.17
(exc. VAT)
PHP202.91
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP18.117 | PHP181.17 |
| 50 - 90 | PHP17.573 | PHP175.73 |
| 100 - 240 | PHP16.87 | PHP168.70 |
| 250 - 490 | PHP16.027 | PHP160.27 |
| 500 + | PHP15.065 | PHP150.65 |
*price indicative
- RS Stock No.:
- 260-5067
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 120mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 3V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Transition Frequency ft | 5.5GHz | |
| Minimum DC Current Gain hFE | 70 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 4mm | |
| Width | 4.5 mm | |
| Series | BFQ | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 120mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 3V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Transition Frequency ft 5.5GHz | ||
Minimum DC Current Gain hFE 70 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 4mm | ||
Width 4.5 mm | ||
Series BFQ | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.
Pb free package
For low noise, low distortion broadband amplifiers in antenna and telecommunications systems
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