Infineon BFQ19SH6327XTSA1 RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89
- RS Stock No.:
- 260-5067
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP181.17
(exc. VAT)
PHP202.91
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP18.117 | PHP181.17 |
| 50 - 90 | PHP17.573 | PHP175.73 |
| 100 - 240 | PHP16.87 | PHP168.70 |
| 250 - 490 | PHP16.027 | PHP160.27 |
| 500 + | PHP15.065 | PHP150.65 |
*price indicative
- RS Stock No.:
- 260-5067
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 120mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 3V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 5.5GHz | |
| Maximum Power Dissipation Pd | 1W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 1.5mm | |
| Length | 4mm | |
| Standards/Approvals | RoHS | |
| Series | BFQ | |
| Width | 4.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 120mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 3V | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 5.5GHz | ||
Maximum Power Dissipation Pd 1W | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 1.5mm | ||
Length 4mm | ||
Standards/Approvals RoHS | ||
Series BFQ | ||
Width 4.5 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.
Pb free package
For low noise, low distortion broadband amplifiers in antenna and telecommunications systems
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