Infineon RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89
- RS Stock No.:
- 260-5066
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
PHP18,975.00
(exc. VAT)
PHP21,252.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP18.975 | PHP18,975.00 |
| 2000 - 3000 | PHP18.016 | PHP18,016.00 |
| 4000 + | PHP17.879 | PHP17,879.00 |
*price indicative
- RS Stock No.:
- 260-5066
- Mfr. Part No.:
- BFQ19SH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 120mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 3V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Transition Frequency ft | 5.5GHz | |
| Minimum Operating Temperature | -65°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Series | BFQ | |
| Standards/Approvals | RoHS | |
| Length | 4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 120mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 3V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Transition Frequency ft 5.5GHz | ||
Minimum Operating Temperature -65°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Series BFQ | ||
Standards/Approvals RoHS | ||
Length 4mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.
Pb free package
For low noise, low distortion broadband amplifiers in antenna and telecommunications systems