Infineon RF Bipolar Transistor, 120 mA NPN, 20 V, 3-Pin SOT-89

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Subtotal (1 reel of 1000 units)*

PHP18,975.00

(exc. VAT)

PHP21,252.00

(inc. VAT)

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Temporarily out of stock
  • 3,000 unit(s) shipping from October 15, 2026
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Units
Per Unit
Per Reel*
1000 - 1000PHP18.975PHP18,975.00
2000 - 3000PHP18.016PHP18,016.00
4000 +PHP17.879PHP17,879.00

*price indicative

RS Stock No.:
260-5066
Mfr. Part No.:
BFQ19SH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

120mA

Maximum Collector Emitter Voltage Vceo

20V

Package Type

SOT-89

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

20V

Maximum Power Dissipation Pd

1W

Transistor Polarity

NPN

Minimum DC Current Gain hFE

70

Maximum Emitter Base Voltage VEBO

3V

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

5.5GHz

Maximum Operating Temperature

150°C

Pin Count

3

Length

4mm

Height

1.5mm

Series

BFQ

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon silicon bipolar RF transistor are suitable for low noise, low distortion broadband amplifiers in antenna and telecommunications systems.

Pb free package

For low noise, low distortion broadband amplifiers in antenna and telecommunications systems

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