Infineon RF Bipolar Transistor, 7.5 mA NPN, 80 V, 4-Pin SOT-343

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Subtotal (1 reel of 3000 units)*

PHP44,043.00

(exc. VAT)

PHP49,329.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP14.681PHP44,043.00

*price indicative

RS Stock No.:
259-1436
Mfr. Part No.:
BFP620H7764XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

7.5mA

Maximum Collector Emitter Voltage Vceo

80V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

7.5V

Maximum Transition Frequency ft

65GHz

Minimum DC Current Gain hFE

110

Maximum Emitter Base Voltage VEBO

1.2V

Maximum Power Dissipation Pd

185mW

Minimum Operating Temperature

-65°C

Transistor Polarity

NPN

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP620

Standards/Approvals

RoHS

Length

2mm

Height

0.9mm

Width

1.25 mm

Automotive Standard

AEC-Q101

The Infineon highly linear low noise RF transistor provides outstanding performance for a wide range of wireless applications. It is based on Infineon's reliable high volume SiGe:C technology & Ideal for CDMA and WLAN applications.

Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application

Accurate SPICE GP model enables effective design in process

Pb-free (RoHS compliant) package

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