Renesas Electronics HFA3096BZ Transistor, 65 mA NPN + PNP, 8 V, 16-Pin SOIC

This image is representative of the product range

View all Bipolar Transistors
Bulk discount available

Subtotal (1 unit)*

PHP832.46

(exc. VAT)

PHP932.36

(inc. VAT)

Add to Basket
Select or type quantity
Orders below PHP3,000.00 (exc. VAT) cost PHP150.00.
In Stock
  • Plus 456 unit(s) shipping from February 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 4PHP832.46
5 - 9PHP815.75
10 +PHP753.34

*price indicative

Packaging Options:
RS Stock No.:
235-5230
Mfr. Part No.:
HFA3096BZ
Manufacturer:
Renesas Electronics
Find similar products by selecting one or more attributes.
Select all

Brand

Renesas Electronics

Product Type

Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

8V

Package Type

SOIC

Mount Type

Surface

Transistor Configuration

Dual

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150mW

Transistor Polarity

NPN + PNP

Maximum Operating Temperature

125°C

Pin Count

16

Width

6 mm

Height

1.75mm

Standards/Approvals

No

Series

HFA3096

Length

9.9mm

Automotive Standard

No

The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors

NPN transistor (fT) 8GHz

NPN current gain (hFE) is 130

NPN early voltage (VA) is 50V

PNP transistor (fT) is 5.5GHz

PNP current gain (hFE) is 60

PNP early voltage (VA)is 20V

Noise figure (50Ω) at 1.0GHz is 3.5dB

Collector to collector leakage <1pA

Complete isolation between transistors

Related links