Renesas Electronics HFA3096BZ Transistor, 65 mA NPN + PNP, 8 V, 16-Pin SOIC

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Subtotal (1 tube of 48 units)*

PHP29,600.544

(exc. VAT)

PHP33,152.592

(inc. VAT)

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Units
Per Unit
Per Tube*
48 +PHP616.678PHP29,600.54

*price indicative

RS Stock No.:
235-5229
Mfr. Part No.:
HFA3096BZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

Transistor

Maximum DC Collector Current Idc

65mA

Maximum Collector Emitter Voltage Vceo

8V

Package Type

SOIC

Mount Type

Surface

Transistor Configuration

Dual

Minimum Operating Temperature

-55°C

Transistor Polarity

NPN + PNP

Maximum Power Dissipation Pd

150mW

Pin Count

16

Maximum Operating Temperature

125°C

Height

1.75mm

Series

HFA3096

Standards/Approvals

No

Length

9.9mm

Width

6 mm

Automotive Standard

No

The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors

NPN transistor (fT) 8GHz

NPN current gain (hFE) is 130

NPN early voltage (VA) is 50V

PNP transistor (fT) is 5.5GHz

PNP current gain (hFE) is 60

PNP early voltage (VA)is 20V

Noise figure (50Ω) at 1.0GHz is 3.5dB

Collector to collector leakage <1pA

Complete isolation between transistors

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