Infineon 4 V 110 mA Diode 1-Pin TSSLP BAT2402LSE6327XTSA1

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Subtotal (1 pack of 5 units)*

PHP286.52

(exc. VAT)

PHP320.90

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP57.304PHP286.52
10 - 95PHP52.138PHP260.69
100 - 245PHP49.792PHP248.96
250 - 495PHP42.274PHP211.37
500 +PHP40.162PHP200.81

*price indicative

Packaging Options:
RS Stock No.:
258-0641
Mfr. Part No.:
BAT2402LSE6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TSSLP

Maximum Continuous Forward Current If

110mA

Peak Reverse Repetitive Voltage Vrrm

4V

Diode Configuration

Single

Series

BAT24-02LS

Pin Count

1

Maximum Forward Voltage Vf

0.41V

Peak Reverse Current Ir

5μA

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Length

0.62mm

Width

0.32 mm

Height

0.31mm

Automotive Standard

No

The Infineon RF Schottky diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz.

Low inductance LS of 0.2 nH

Low capacitance C of 0.2 pF at 1 MHz

TSSLP-2-1 package with a 0201 footprint

Pb-free (RoHS compliant) and halogen free

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