Infineon 4 V 110 mA Diode TSLP BAT1502ELE6327XTMA1

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Subtotal (1 pack of 10 units)*

PHP220.40

(exc. VAT)

PHP246.80

(inc. VAT)

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  • 11,000 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 10PHP22.04PHP220.40
20 - 90PHP20.036PHP200.36
100 - 240PHP18.583PHP185.83
250 - 490PHP16.079PHP160.79
500 +PHP15.328PHP153.28

*price indicative

Packaging Options:
RS Stock No.:
258-0637
Distrelec Article No.:
304-40-474
Mfr. Part No.:
BAT1502ELE6327XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Mount Type

Surface

Product Type

Diode

Package Type

TSLP

Maximum Continuous Forward Current If

110mA

Peak Reverse Repetitive Voltage Vrrm

4V

Series

BAT15-02EL

Diode Configuration

Single

Maximum Forward Voltage Vf

0.41V

Peak Reverse Current Ir

5μA

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

TSLP-2-19 package with a 0402 foot print

Pb-free, RoHS compliant and halogen-free

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